this is information on a product in full production. june 2012 doc id 023115 rev 1 1/9 9 stth20l03c high frequency secondary rectifier datasheet ? production data features ultrafast, soft and noise-free recovery low forward voltage drop description dual center tap fast recovery epitaxial diodes suited for switch mode power supply and high frequency dc/dc converters. packaged in to-220ab or d 2 pak, this device is especially intended for secondary rectification inside smps with high space and power-density. table 1. device summary symbol value i f(av) 2 x 10 a v rrm 300 v t j -40 to +175 c v f (max) 0.95 v t rr (typ) 26 ns a1 a2 k a1 k a2 a1 k a2 to-220ab STTH20L03CT d 2 pa k stth20l03cg www.st.com
characteristics stth20l03c 2/9 doc id 023115 rev 1 1 characteristics when diodes 1 and 2 are used simultaneously: tj (diode 1) = p (diode 1) x r th(j-c) (per diode) + p (diode 2) x r th (c) to evaluate the conduction losses use the following equation: p = 0.8 x i f(av) + 0.015 i f 2 (rms)) table 2. absolute ratings (limiting values, per diode, at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 300 v i f(rms) forward rms current 30 a i f(av) average forward current, = 0.5 t c = 155 c per diode per device 10 20 a t c = 150 c i fsm surge non repetitive forward current t p = 10 ms sinusoidal 150 a t stg storage temperature range -65 to + 175 c t j operating junction temperature range -40 to +175 c table 3. thermal resistance symbol parameter value (max) unit r th(j-c) junction to case per diode 1.5 c/w to t a l 1 . 0 r th(c) coupling 0.5 table 4. static electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 10 a t j = 125 c 10 100 v f (2) forward voltage drop t j = 25 c i f = 10 a 0.95 1.2 v t j = 125 c 0.8 0.95 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2%
stth20l03c characteristics doc id 023115 rev 1 3/9 table 5. dynamic electrical characteristics (per diode) symbol parameter test conditions min. typ. max. unit t rr reverse recovery time t j = 25 c i f = 1 a, v r = 30 v di f /dt = -100 a/s 26 35 ns t j = 125 c i f = 10 a, v r = 200 v di f /dt = -200 a/s 55 72 i rm reverse recovery current t j = 125 c i f = 10 a, v r = 200 v di f /dt = -200 a/s 912a s factor softness factor 0.3 q rr reverse recovery charges t j = 125 c i f = 10 a, v r = 200 v di f /dt = -200 a/s 250 375 nc t fr forward recovery time t j = 25 c i f = 10 a, v fr = 1.05 v di f /dt = 100 a/s 200 ns v fp forward recovery voltage 2.5 3.5 v figure 1. conduction losses versus average forward current (per diode) figure 2. forward voltage drop versus forward current (per diode) p f(av) (w) 0 2 4 6 8 10 12 14 16 02468101214 = 0.05 = 0.1 = 0.2 = 0.5 = 1.0 i f(av) (a) t =tp/t tp i fm (a) 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 t j =125 c (maximum values) t j =125 c (typical values) t j =25 c (maximum values) v fm (v) figure 3. relative variation of thermal impedance junction to case versus pulse duration figure 4. peak reverse recovery current versus di f /dt (typical values, per diode) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s) i rm (a) 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =200 v t j =125 c di f /dt(a/s)
characteristics stth20l03c 4/9 doc id 023115 rev 1 figure 5. reverse recovery time versus di f /dt (typical values, per diode) figure 6. reverse recovery charge versus di f /dt (typical values, per diode) 0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v r =200 v t j =125 c di f /dt(a/s) t rr (ns) 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 q rr (nc) i f =i f(av) v r =200 v t j =125 c di f /dt(a/s) figure 7. reverse recovery softness factor versus di f /dt (typical values, per diode) figure 8. relative variation of dynamic parameters versus junction temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 s factor i f =i f(av) v r =200 v t j =125 c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 25 50 75 100 125 i f =i f(av) v r =200 v reference: t j =125 c i rm s factor q rr t j (c) figure 9. transient peak forward voltage versus di f /dt (typical values, per diode) figure 10. forward recovery time versus di f /dt (typical values, per diode) v fp (v) 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) t j =125 c di f /dt(a/s) 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 300 350 400 450 500 i f =i f(av) v fr =1.05 v t j =125 c di f /dt(a/s) t (ns) fr
stth20l03c characteristics doc id 023115 rev 1 5/9 figure 11. junction capacitance versus reverse voltage applied (typical values, per diode) figure 12. thermal resistance, junction to ambient, versus copper surface under tab (d 2 pa k ) 10 100 1000 1 10 100 1000 v r (v) c(pf) f=1 mhz v osc =30 mv rms t j =25 c 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 s cu (cm2) r th(j-a) (c/w) d2pak printed circuit board fr4, copper thickness: 35 m
package information stth20l03c 6/9 doc id 023115 rev 1 2 package information epoxy meets ul94, v0 cooling method: by conduction (c) recommended torque value: 0.4 to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 13. footprint (dimensions in mm) table 6. d 2 pak dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 g l l3 l2 b b2 e * flat zone no less than 2mm a c2 d r a2 m v2 c a1 * 16.90 10.30 8.90 3.70 5.08 1.30
stth20l03c package information doc id 023115 rev 1 7/9 d table 7. to-220ab dimensions ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151 a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m
ordering information stth20l03c 8/9 doc id 023115 rev 1 3 ordering information 4 revision history table 8. ordering information order code marking package weight base qty delivery mode STTH20L03CT STTH20L03CT to-220ab 1.9 g 50 tube stth20l03cg-tr stth20l03cg d 2 pa k 1.48 g 1000 tape and reel table 9. document revision history date revision changes 22-jun-2012 1 initial release.
stth20l03c doc id 023115 rev 1 9/9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
|
